Current injection technique

The current injection technique is a technique developed to reduce the turn-OFF switching transient of power bipolar semiconductor devices. It was developed and published by Dr S. Eio of Staffordshire University (United Kingdom) in 2007. The current injection technique is a technique developed to reduce the turn-OFF switching transient of power bipolar semiconductor devices. It was developed and published by Dr S. Eio of Staffordshire University (United Kingdom) in 2007. The Turn-OFF switching transient of silicon-based power bipolar semiconductor devices, caused by stored charge in the device during the forward conduction state, limits switching speed of the device, which in turn limits the efficiency of the application it is used within.