Semiconductor device

A semiconductor device is an electronic component that exploits the electronic properties of semiconductor material, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced vacuum tubes in most applications. They use electrical conduction in the solid state rather than the gaseous state or thermionic emission in a vacuum.Transistor. This is an abbreviated combination of the words 'transconductance' or 'transfer', and 'varistor'. The device logically belongs in the varistor family, and has the transconductance or transfer impedance of a device having gain, so that this combination is descriptive. A semiconductor device is an electronic component that exploits the electronic properties of semiconductor material, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced vacuum tubes in most applications. They use electrical conduction in the solid state rather than the gaseous state or thermionic emission in a vacuum. Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of two or more devices—which can number in the billions—manufactured and interconnected on a single semiconductor wafer (also called a substrate). Semiconductor materials are useful because their behavior can be easily manipulated by the deliberate addition of impurities, known as doping. Semiconductor conductivity can be controlled by the introduction of an electric or magnetic field, by exposure to light or heat, or by the mechanical deformation of a doped monocrystalline silicon grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs due to mobile or 'free' electrons and electron holes, collectively known as charge carriers. Doping a semiconductor with a small proportion of an atomic impurity, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes, it is called a p-type semiconductor (p for positive electric charge); when it contains excess free electrons, it is called an n-type semiconductor (n for negative electric charge). A majority of mobile charge carriers have negative charge. The manufacture of semiconductors controls precisely the location and concentration of p- and n-type dopants. The connection of n-type and p-type semiconductors form p–n junctions. The most common semiconductor device in the world is the MOSFET (metal–oxide–semiconductor field-effect transistor), also called the MOS transistor. As of 2013, billions of MOS transistors are manufactured every day. Semiconductor devices made per year have been growing by 9.1% on average since 1978, and shipments in 2018 are predicted for the first time to exceed 1 trillion, meaning that well over 7 trillion has been made to date, in just in the decade prior. A semiconductor diode is a device typically made from a single p–n junction. At the junction of a p-type and an n-type semiconductor there forms a depletion region where current conduction is inhibited by the lack of mobile charge carriers. When the device is forward biased (connected with the p-side at higher electric potential than the n-side), this depletion region is diminished, allowing for significant conduction, while only very small current can be achieved when the diode is reverse biased and thus the depletion region expanded. Exposing a semiconductor to light can generate electron–hole pairs, which increases the number of free carriers and thereby the conductivity. Diodes optimized to take advantage of this phenomenon are known as photodiodes.Compound semiconductor diodes can also be used to generate light, as in light-emitting diodes and laser diodes. Bipolar junction transistors are formed from two p–n junctions, in either n–p–n or p–n–p configuration. The middle, or base, region between the junctions is typically very narrow. The other regions, and their associated terminals, are known as the emitter and the collector. A small current injected through the junction between the base and the emitter changes the properties of the base-collector junction so that it can conduct current even though it is reverse biased. This creates a much larger current between the collector and emitter, controlled by the base-emitter current. Another type of transistor, the field-effect transistor, operates on the principle that semiconductor conductivity can be increased or decreased by the presence of an electric field. An electric field can increase the number of free electrons and holes in a semiconductor, thereby changing its conductivity. The field may be applied by a reverse-biased p–n junction, forming a junction field-effect transistor (JFET) or by an electrode insulated from the bulk material by an oxide layer, forming a metal–oxide–semiconductor field-effect transistor (MOSFET). The MOSFET, a solid-state device, is the most used semiconductor device today. The gate electrode is charged to produce an electric field that controls the conductivity of a 'channel' between two terminals, called the source and drain. Depending on the type of carrier in the channel, the device may be an n-channel (for electrons) or a p-channel (for holes) MOSFET. Although the MOSFET is named in part for its 'metal' gate, in modern devices polysilicon is typically used instead.