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Reliability (semiconductor)

Reliability of semiconductor devices can be summarized as follows: Reliability of semiconductor devices can be summarized as follows: Design factors affecting semiconductor reliability include: voltage derating, power derating, current derating, metastability, logic timing margins (logic simulation), timing analysis, temperature derating, and process control. Reliability of semiconductors is kept high through several methods. Cleanrooms control impurities,process control controls processing, and burn-in (short term operation at extremes) and probe and test reduce escapes. Probe (wafer prober) tests the semiconductor die, prior to packaging, via micro-probes connected to test equipment. Final test tests the packaged device, often pre-, and post burn-in for a set of parameters that assure operation. Process and design weaknesses are identified by applying a set of stress tests in the qualification phase of the semiconductors before their market introduction e. g. according to the AEC Q100 and Q101 stress qualifications. Parts Average Testing is a statistical method for recognizing and quarantining semiconductor die that have a higher probability of reliability failures. This technique identifies characteristics that are within specification but outside of a normal distribution for that population as at-risk outliers not suitable for high reliability applications. Tester-based Parts Average Testing varieties include Parametric Parts Average Testing (P-PAT) and Geographical Parts Average Testing (G-PAT), among others. Inline Parts Average Testing (I-PAT) uses data from production process control inspection and metrology to perform the outlier recognition function. Bond strength measurement is performed in two basic types: pull testing and shear testing. Both can be done destructively, which is more common, or non destructively. Non destructive tests are normally used when extreme reliability is required such as in military or aerospace applications.

[ "Electronic engineering", "Electrical engineering", "Reliability engineering", "Power (physics)", "Highly accelerated life test", "JEDEC memory standards", "High-temperature operating life", "Pad cratering", "Power cycling" ]
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