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Power semiconductor device

A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC.Switching times range from tens of nanoseconds to a few hundred microseconds. Nominal voltages for MOSFET switching devices range from a few volts to a little over 1000 V, with currents up to about 100 A or so, though MOSFETs can be paralleled to increase switching current. MOSFET devices are not bi-directional, nor are they reverse voltage blocking.An example of this new device from ABB shows how this device improves on GTO technology for switching high voltage and high current in power electronics applications. According to ABB, the IGCT devices are capable of switching in excess of 5000 VAC and 5000 A at very high frequencies, something not possible to do efficiently with GTO devices. A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC.

[ "Voltage", "Power (physics)", "Safe operating area", "2N3055", "Power electronic substrate", "ambipolar diffusion equation", "smart power technology" ]
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