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Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate. The overlayer is called an epitaxial film or epitaxial layer. The term epitaxy comes from the Greek roots epi (ἐπί), meaning 'above', and taxis (τάξις), meaning 'an ordered manner'. It can be translated as 'arranging upon'. For most technological applications, it is desired that the deposited material form a crystalline overlayer that has one well-defined orientation with respect to the substrate crystal structure (single-domain epitaxy). Epitaxial films may be grown from gaseous or liquid precursors. Because the substrate acts as a seed crystal, the deposited film may lock into one or more crystallographic orientations with respect to the substrate crystal. If the overlayer either forms a random orientation with respect to the substrate or does not form an ordered overlayer, it is termed non-epitaxial growth. If an epitaxial film is deposited on a substrate of the same composition, the process is called homoepitaxy; otherwise it is called heteroepitaxy. Homoepitaxy is a kind of epitaxy performed with only one material, in which a crystalline film is grown on a substrate or film of the same material. This technology is used to grow a film which is more pure than the substrate and to fabricate layers having different doping levels. In academic literature, homoepitaxy is often abbreviated to 'homoepi'. Homotopotaxy is a process similar to homoepitaxy except that the thin-film growth is not limited to two-dimensional growth. Here the substrate is the thin-film material. Heteroepitaxy is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film grows on a crystalline substrate or film of a different material. This technology is often used to grow crystalline films of materials for which crystals cannot otherwise be obtained and to fabricate integrated crystalline layers of different materials. Examples include silicon on sapphire, gallium nitride (GaN) on sapphire, aluminium gallium indium phosphide (AlGaInP) on gallium arsenide (GaAs) or diamond or iridium, and graphene on hexagonal boron nitride (hBN). Heterotopotaxy is a process similar to heteroepitaxy except that thin-film growth is not limited to two-dimensional growth; the substrate is similar only in structure to the thin-film material. Pendeo-epitaxy is a process in which the heteroepitaxial film is growing vertically and laterally at the same time.In 2D crystal heterostructure, graphene nanoribbons embedded in hexagonal boron nitride give an example of pendeo-epitaxy.

[ "Condensed matter physics", "Analytical chemistry", "Substrate (chemistry)", "Nanotechnology", "layer", "Reflectance difference spectroscopy", "reduced pressure chemical vapor deposition", "epitaxial material", "Gadolinium gallium garnet", "Polarized Reflectance Spectroscopy" ]
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