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Improvement of ferroelectric properties of TiN/Hf 0.5 Zr 0.5 O 2 /Si gate stacks by inserting Al 2 O 3 interfacial layers
Improvement of ferroelectric properties of TiN/Hf 0.5 Zr 0.5 O 2 /Si gate stacks by inserting Al 2 O 3 interfacial layers
2020
Zaoyang Lin
Tsung-En Lee
Hanzhi Tang
Kasidit Toprasertpong
Mitsuru Takenaka
Shinichi Takagi
Keywords:
Ferroelectricity
Optoelectronics
gate stack
Materials science
Tin
Correction
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