High-Speed SiGeBiCMOSTechnologies: 120-nmStatus andEnd-of-Roadmap Challenges

Thispaperpresents thestatus ofhigh-speed SiGeBiCMOStechnologies atSTMicroelectronics. Process and electrical characteristics oftwo 120-nmplatforms, qualified orunderdevelopment, arepresented together with results demonstrated onoptical andmillimeter-wave circuits. Advanceddevelopments addressing end-of-roadmap BiCMOSarealso presented anddiscussed. IndexTerms- BiCMOS,Heterojunction Bipolar Transistors (HBT),millimeter-wave circuits, optical communications, Silicon Germanium(SiGe).