Diffraction grating on chalcogenide glass (GeSe5)80B20 fabricated by mask ion implantation

Abstract An approach for creating of a diffraction chalcogenide semiconductor glass grating on the surface of (GeSe5)80B20 layer by low-energy high-dose mask ion implantation is presented. During Ag+-ion implantation, Ag nanoparticles were synthesized in unprotected areas of irradiated glass. The formation of periodic surface microstructures during local ion sputtering of semiconductor glass was observed by scanning electron and atomic force microscopy. With probed a He-Ne laser the efficiency of optical diffraction grating was demonstrated.