Current transport and capacitance–voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

Abstract In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current–voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height ( ϕ b ) were determined. The photovoltaic parameters were identified based on the current density–voltage characteristics under illumination. The capacitance–voltage characteristics showed that the junction was abrupt in nature.