Carrier lifetime under low and high electric field conditions in semi-insulating GaAs

Abstract The mobility lifetime product of holes and electrons under low electric field conditions was determined by alpha spectroscopy using SI-GaAs as a photo conductivity detector. The lifetime in high electric field (≥ 10 4 V/cm) of electrons was investigated with Schottky diodes. Both results were analyzed as a function of substrate resistivity and trap concentrations. We identified the ionized arsenic antisite defect (EL2 + ) as the dominant electron trap in the high field region and determined the capture cross-section as being (8.0 ± 0.6) × 10 −14 cm 2 .