Dynamic Range Extension of a CMOS Active Pixel Sensor with Gate/Body-Tied PMOSFET-Type Photodetectors Using a Feedback Structure

In this paper, a dynamic range extension technique is proposed based on 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The proposed APS and conventional APS have been designed and fabricated by using 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process and their characteristics have been measured.