Modeling the Effects of the Average Temperature on the Capacitance of an Inorganic Semiconductor in the Presence of Excitons

In this work, the author made a numerical modeling of the capacitance of an inorganic semiconductor silicon in the presence of excitons. The model obtained allowed him to calculate a average temperature, concentrations of carriers (electrons and excitons) and capacitance. The motivation of the author is firstly to show the effects of the average temperature and secondly those of heat. To perform such work, the author chose the finite volume method as a method of solving physical problems.