Engineering Architecture of Quantum Dot-Based Light Emitting Diode for High Device Performance with Double-Sided Emission Fabricated by Non-Vacuum Technique
2020
The
CdSe/ZnS quantum dots (QDs) have drawn the attention of the
researchers due to their superior photophysical properties and their
applications in QD-based light-emitting diodes (QLEDs). The conventional
CdSe/ZnS-based QLED uses a highly conductive electron-transport layer,
low-mobility hole-transporting layers (HTLs), and a vacuum-deposited
opaque metal electrode at the top. This structure renders unbalanced
charge injection into the emissive layer and also allows the device
to emit light only at the bottom side, which affects the device output
luminance and stability. Moreover, in the vacuum-deposition technique,
the fabrication process is more complex, expensive, and time-consuming.
To address all these issues, we fabricated an all-solution processable
double-sided emitting QLED by a nonvacuum technique using high mobility
multi-HTLs with a cascade structure, an insulating layer, and a transparent
silver nanowire (AgNW) electrode for balanced charge injection for
obtaining higher luminance at the top-side AgNW electrode. The as-fabricated
QLED exhibited a very low turn-on voltage and high luminance of 2.2
V and 41,010 cd m–2, respectively. The QLED has
also shown a high current efficiency of 15.2 cd A–1, a luminous efficiency of 16.2 lm W–1, and an
external quantum efficiency of 8.2% at the top-side. These results
indicate that the double-sided emitting QLED device opens up a pathway
for designing next-generation lighting and display devices.
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