Optical characterization of isoelectronic ZnSe1−xOx semiconductors

Abstract We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe 1− x O x ( x =0−0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe 1− x O x decreases with the increase in O concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent β .