A high power Ge n-i-p waveguide photodetector on silicon-on-insulator substrate

We demonstrate high current operation of an evanescently coupled Ge waveguide photodetector grown on top of a Si rib waveguide. A 7.4μηι × 500μηι photodetector was found to dissipate 1.003 W of power (125.49mA at −8V).