An Extraction Method for the Interface Acceptor Distribution of GaN MOS-HEMT

This article presents a method for extracting the interface acceptor distribution of GaN metal–oxide–semiconductor high electron mobility transistor (MOS-HEMT) using a compact 2-dimensional electron gas model. The presented method is capable of self-consistently calculating the Fermi energy and the density of the ionized interface acceptor ( ${n}_{{\text {it},\text {A}}}$ ). Through the presented method, the density of states (DoS) of the interface acceptor ( ${D}_{{\text {it},\text {A}}}$ ) and ${n}_{{\text {it},\text {A}}}$ are obtained. Especially, the DoS of the interface acceptor distributed close to the conductband is also obtained. The calculated results are well supported by the results from the ac conductance method and the subthreshold swing (SS)-based method, thus verifying the correctness of the presented method.