Miniaturized SiGe V-Band Active Transmit Balun

A miniaturized V-band active transmit balun suitable for direct attachment to an integrated on-chip dipole antenna is proposed in this work. The circuit is constructed using a 0.35 μm SiGe HBT bipolar process (Infineon fT / fmax=170/250 GHz) operating at 55-65 GHz is fabricated and measured. The circuit exhibits a more than 11 dB conversion gain with magnitude imbalance less than 1 dB and phase error less than 5 degrees from 55 GHz to 65 GHz. The chip area is 0.6x0.7 mm2 including all pads.