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(Invited) An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks
(Invited) An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks
2010
Jun Chen
Takashi Sekiguchi
Naoki Fukata
Masami Takase
Yoshihiro Nemoto
Ryu Hasunuma
Kikuo Yamabe
Motoyuki Sato
Keisaku Yamada
Toyohiro Chikyow
Keywords:
Electron beam-induced current
High-κ dielectric
Nuclear magnetic resonance
Materials science
gate stack
Optoelectronics
Correction
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