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C-10-2 ミリ波帯用Si基板上AlGaN/GaN HEMT(C-10,電子デバイス,一般セッション)
C-10-2 ミリ波帯用Si基板上AlGaN/GaN HEMT(C-10,電子デバイス,一般セッション)
2015
yuuki katayama
Dennis Christy
keiiti tamesue
takasi egawa
akio fun sima
Keywords:
Electronic engineering
High-electron-mobility transistor
Materials science
Optoelectronics
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