Novel x-ray image sensor using CsBr:Eu phosphor for computed radiography

CsBr phosphor ceramics doped with different luminescence center such as In 2 O 3 , Eu 2 O 3 , EuCl 3 , SmCl 3 , TbCl 3 , GdCl 3 or NdCl 3 as a candidate of a new photosimulable phosphor for medical x-ray imaging sensor are prepared using a conventional ceramic fabrication process. It is found that x-ray-irradiated Eu-doped CsBr (CsBr:Eu) exhibits intense photostimulated luminescence (PSL). The peak wavelength of the PSL emission and stimulation spectra of CsBr:Eu phosphor ceramic sample is 450 nm and 690 nm, respectively. The dependence of PSL properties on preparing conditions of phosphor ceramic samples, such as Eu concentration, sintering temperature and sintering time, is studied and the optimum preparing condition is also studied. It is found that the PSL intensity of CsBr:Eu phosphor ceramics fabricated under optimum preparation condition is higher than that of commercially available imaging plate (IP) using BafBr:Eu. The image quality of the IP using CsBr:Eu phosphor film is better than that of commercially available IP.