Simulation and design of Ku band power amplifier based on GaN HEMT

A Ku band solid state power amplifier was designed with a GaN HEMT large signal model in this paper. The circuits, which include input matching network, output matching network and bias network, were simulated with commercial software. An entire simulation model of the power amplifier was then established for some key performance. The result shows that output power higher than 45.3dBm, power gain greater than 7.3dB and PAE(power added efficiency) over 30% during 13.3GHz ∼13.7GHz.