A novel small capacitance RF-MOSFET with small-resistance Long-finger Gate Electrode

We have developed a small capacitance RF-MOSFET with small-resistance long-finger gate electrode, which is featured by Direct Finger Contact (DFC) on the gate electrode in active region to reduce its resistance. The unique structure and layout, which is different from a conventional multiplied-short-finger MOSFET, suppress the parasitic capacitance around the gate electrode to obtain high f T . This layout-optimized DFC MOSFET is very useful for RF/Mixed signal SoCs in deep-sub-micron generations.