Nanoindentation of amorphous Ge-As-Se films

Changes in the nanohardness H and Young’s modulus E of Ge x As y Se100 − x − y films have been studied as a function of the penetration depth of the Berkovich indenter. The values of H and E have been measured in the regime of harmonic modulation of a linearly increasing indenter load. It has been shown that the changes in E and H of the films under study during nanoindentation arise due to the peculiarities of their elastoplastic behavior, the formation of deformation zones near the nanocontact, and also size effects.