The current-induced heat generation in a quantum dot with Andreev-Fano resonance

Triggered by the motivation of conquering the heat bottleneck facing nanoelectronics, we studied the current-induced heat generation in a quantum dot (QD) with the Andreev-Fano (AF) resonance. In the strong electron-phonon interaction regime, the formula of steady heat generation is extended by Nambu representation of nonequilibrium Green’s functions. The numerical results demonstrate that for the Normal metal-[Insulator (I), QD]-Superconductor ring, (i) the exact phase locking property of current is destroyed, so is that of heat generation; (ii) the AF resonance with phonon emission plays a vital role in the heating at both T = 0 K and T > 0 K; and (iii) the modulation to the heat generation by the magnetic flux acts in a variety of ways for the different effective dot level at the different temperature. We conclude that at both T = 0 K and T > 0 K, when the effective dot level is aligned to the Fermi level of the superconducting electrode, the performance of the device becomes optimal.Triggered by the motivation of conquering the heat bottleneck facing nanoelectronics, we studied the current-induced heat generation in a quantum dot (QD) with the Andreev-Fano (AF) resonance. In the strong electron-phonon interaction regime, the formula of steady heat generation is extended by Nambu representation of nonequilibrium Green’s functions. The numerical results demonstrate that for the Normal metal-[Insulator (I), QD]-Superconductor ring, (i) the exact phase locking property of current is destroyed, so is that of heat generation; (ii) the AF resonance with phonon emission plays a vital role in the heating at both T = 0 K and T > 0 K; and (iii) the modulation to the heat generation by the magnetic flux acts in a variety of ways for the different effective dot level at the different temperature. We conclude that at both T = 0 K and T > 0 K, when the effective dot level is aligned to the Fermi level of the superconducting electrode, the performance of the device becomes optimal.