The use of InP-based semiconductor reflective stacks for enhanced device performance

Abstract The growth, by MOVPE, and characterisation of multilayer reflective stacks have been examined. Reflectivities of 55%–60% into air have been obtained for relatively thin (7 period) structures using both GaInAsP/InP and GaAlInAs/InP material combinations which are consistent with predicted values. These structures have been used in the fabrication of long wavelength reflective modulators. The control of the growth necessary for the realisation of these devices is also discussed. It has been found that the use of a chirped reflective stack can relax the tolerances on thickness control. Enhanced device performance has been demonstrated using a 50 period GaInAs/InP MQW reflective modulator where, for the first time, a high contrast ratio (3 dB) at a low operating voltage (5 V) has been achieved.