HgTe colloidal quantum dot photodiodes for extended short-wave infrared detection

HgTe colloidal quantum dots are investigated as the active material in photodiodes for extended short-wave infrared up to 2.6 μm. The HgTe colloidal quantum dots photodiodes achieve external quantum efficiencies above 50% and specific detectivities of 1 × 1011 at 2.2 μm at room temperature with a microsecond response time and compete with commercial extended InGaAs photodiodes.HgTe colloidal quantum dots are investigated as the active material in photodiodes for extended short-wave infrared up to 2.6 μm. The HgTe colloidal quantum dots photodiodes achieve external quantum efficiencies above 50% and specific detectivities of 1 × 1011 at 2.2 μm at room temperature with a microsecond response time and compete with commercial extended InGaAs photodiodes.