Influence of Silicon Film Parameters on C-V Characteristics of Partially Depleted SOI MOSFETs.

Discussion of an effect of silicon film thickness, recombination lifetime and generation lifetime on C-V characteristics of partially-depleted SOI MOSFETs in the strong inversion region has been presented. The analysis has been carried out using a physical model of these devices. It has been shown, that the film thickness and recombination lifetime are relevant for accurate simulation of C-V characteristics of PD SOI MOSFETs.