High-Temperature Photovoltaic Effect in La0.4Ca0.6MnO3/SiOx/Si Heterojunction

We fabricated a heterojunction of La0.4Ca0.6MnO3/SiOx/n-Si and investigated its electronic transport and ultraviolet photovoltaic properties at higher temperature up to 673 K. The rectifying behaviors vanished with the energy-bandstructure evolvement from 300 to 673 K. Under irradiation of a 248nm pulse laser, the peak values of open-circuit photovoltage and short-circuit photocurrent decreased drastically. This understanding of the temperature-related current-voltage behavior and ultraviolet photodetection of oxide heterostructures should open a route for devising future microelectronic devices working at high temperature. PACS: 73.40.Lq, 71.27. + a, 73.50.Pz.