Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz

We report a single-stage tuned amplifier that exhibits a peak small signal gain of 6.3 dB at 175 GHz. The amplifier was designed in a transferred-substrate InP-based HBT technology that has exhibited record values of extrapolated f/sub max/. The gain-per-stage of the amplifier is amongst the highest reported in any transistor technology in this frequency band.