Electrical properties of Sn/Methyl Violet/p-Si/Al Schottky diodes

Abstract We studied the electrical characteristics of a Schottky diode with organic components Sn/methyl-violet/p-Si/Al. We investigated the diode’s current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f). From ln(I)-V plots of the diodes, ideality factor (n) and saturation current (I0) were calculated. Moreover, the barrier height (Φb) and series resistance (RS) were calculated with Cheungs’ and Norde functions. Results shown that at the methyl-violet layerplayed an important role in electrical properties such as series resistance, barrier height, ideality factor and capacitance