A 1 MB Cache Subsystem Prototype With 1.8 ns Embedded DRAMs in 45 nm SOI CMOS
2009
We describe a single voltage supply, 1 MB cache subsystem prototype that integrates 2 GHz embedded DRAM (eDRAM) macros with on-chip word-line voltage supply generation, a 4 Kb one-time-programmable read-only memory (OTPROM) for redundancy and repair control, on-chip OTPROM programming voltage generation, clock generation and distribution, array built-in self-test circuitry (ABIST), user logic and pervasive logic. The eDRAM employs a programmable pipeline, achieving 1.8 ns latency, and features concurrent refresh capability.
Keywords:
- Correction
- Cite
- Save
- Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI