Anomalously slow carrier-phonon interaction in InGaAs/InGaAsP multi-quantum-well investigated by time-development of carrier temperature

Extremely large electron-LO phonon intrasubband scattering time (8 ps) was obtained, by the rate-equation analysis for the experimental time-development of the carrier temperature in a 1.5 /spl mu/m-band multi-quantum-well (MQW) laser amplifier. Consequently, pronounced optical output power saturation was predicted in the MQW laser.