Multilayer transition-metal dichalcogenide channel Thin-Film Transistors

We show that multilayered transition-metal dichalcogenides such as multilayer MoS 2 present a compelling case for Thin-Film Transistors (TFTs) for large-area display technology. Through a combined structural, optical, and electronic characterization of multilayer MoS 2 TFTs, supported by density-functional theory based bandstructure calculations, we show the inherently attractive properties of these materials for such applications. We find that the current modulation of such devices is high, the current saturation is robust, normally-off operation is feasible, effective field-effect mobility at RT exceeds 100 cm 2 /V.s, and the channel can be operated in both accumulation and inversion modes. These properties make multilayer MoS 2 more feasible than single layer versions to maintain processing robustness.