Ga as an additive in the As2Te3 glass

Results of measurements of the mean atomic volume (V), the glass transition temperature (Tg), the activation energy for glass transition (Et) and the d. c. electrical conductivity (σ) are reported and discussed for ten glass compositions of the Ga–As–Te system. The glasses studied can be represented as Ga x (As0.4Te0.6)100−xglasses, with the additive Ga ranging from 0 to 12 atomic percent (at.%) in the parent As2Te3glass. In the Ga x (As0.4Te0.6)100−xglasses, changes in slope are observed in the V, Tg, Et, σ and other electronic properties, at the composition with a Ga content of 2 at.%. The results are compared with those obtained on introduction of Ag and Cu to the As2Te3and the [0.5As2Te3–0.5As2Se3] glasses. Analysis of the data suggest formation of GaAs, Ga2Te3and excess Te structural units (s.u.) in lieu of some of the original As2Te3s.u., for addition of Ga up to 2 at.% to the parent As2Te3glass; for higher Ga contents, formation of GaAs, GaTe and excess Te s.u. are indicated.