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A Comparison of the Diffusion Behavior of Ion‐Implanted Sn, Ge, and Si in Gallium Arsenide
A Comparison of the Diffusion Behavior of Ion‐Implanted Sn, Ge, and Si in Gallium Arsenide
1991
Emily L. Allen
J.J. Murray
Michael D. Deal
James D. Plummer
K. S. Jones
W.S. Rubart
Keywords:
Ion implantation
Doping
Germanium
Gallium arsenide
Ion
Transmission electron microscopy
Tin
Inorganic chemistry
Chemistry
Silicon
Analytical chemistry
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