Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving S min = 32 mV/dec and g m /I D = 100 V -1

We present vertical InAs/InGaAsSb/GaSb nanowire tunnel FETs (TFETs) on Si demonstrating subthreshold swing (S) of 32 mV/dec with I ON = 4 µA/µm for I OFF = 1 nA/µm at V DS = 0.3V. The demonstrated drive currents is the highest reported for a TFET with S below 40 mV/dec resulting in a transconductance efficiency as high as 100 V-1. These results have been achieved by optimizing the source segment growth scheme and the device processing. The devices are compliant with low-power logic applications capable of operation at I OFF = 100 pA/µm.