Large (50 μm)2 metal–semiconductor–metal photodetectors with 18 GHz bandwidth at 3 V bias; Reduction of hole pileup

1998 
Metal–semiconductor–metal photodetectors were fabricated on an AlGaAs/GaAs/AlGaAs double heterostructure with no graded layers. Devices with photolithographically defined finger spacing and width of 1 μm (“1×1”) exhibited a saturation bandwidth of greater than 20 GHz, for bias voltages between 3 and 4 V. We attribute this to minimal hole pileup, and propose a simple model for the energy of hot holes near the band offset at the cathode. Using this model, estimates of the bias required to reduce hole pileup in different material systems were derived. The model shows good agreement with results reported here and elsewhere.
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