Experimental evidence of the dissipationless transport of chiral edge state in Chern insulator MnBi2Te4 nanodevices

We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevice of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents the nearly zero longitudinal resistance and quantized Hall plateau of over 0.97 h/e2 in the whole temperature range from very low to the Neel temperature 22 K. The nearly zero resistance is kept well in all the four-probe nonlocal measurement, and two-probe measurement exhibits +1 h/e2 plateau, while the three-probe nonlocal measurement is magnetic field dependent. It indicates the features of non-dissipation and chirality of edge state. The CES is found to exhibit three regimes of temperature dependence, i.e. well-developed dissipationless transport, variable range hopping and thermal activation. Even in the lowest temperature, a current of over 1.4 {\mu}A will break the well-developed dissipationless transport. These characteristics provide further evidences for the Chern insulator state in the MnBi2Te4.