EUV lithography introduction at Chipmakers

With the 1 st NXE:3100, 0.25NA and 0.8σ conventional illumination, being operational at a Semiconductor Manufacturer, we enter the next phase in EUVL implementation. Since 2006 process and early device verification has been done using the two Alpha Demo Tools (ADT's) located at Leuven, Belgium at IMEC and Albany, New York, USA. Now process integration has started at actual Chipmakers sites. This is a major step for the development and implementation of EUVL. The focus is now on the integration of EUVL exposure tools, along with the rest of lithographic infrastructure such as mask, resist, and computational litho tools, into a manufacturing flow, preparing high volume EUVL manufacturing expected to start in late 2012. Fore high volume manufacturing with EUV, we will update on the design status of the NXE:3300B being introduced in 2012 with a productivity target of 125wph. Featuring a 0.33NA lens and off-axis illumination at full transmission, a half pitch resolution from 22nm to 16nm can be supported.