High Energy Radiation Effects on the Seebeck Coefficient, van der Pauw-Hall Effect Parameters and Optical Properties of Si/Si+Sb Multi-Nanolayered Thin Films

We have prepared thermoelectric devices from alternating layers of Si/Si+Sb superlattice films using the electron beam deposition (EBD). In order to determine the stoichiometry of the elements and the thickness of the grown multi-layer film, Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used. The 5 MeV Si ions bombardments have been performed using the AAMU Pelletron ion beam accelerator, to form quantum clusters in the multi-layer superlattice thin films to improve the thermoelectric and optical properties for more efficient thermoelectric devices. The fabricated multilayered thermoelectric devices have been characterized using cross plane electrical conductivity and Seebeck coefficient, van der Pauw resistivity, density, mobility, Hall coefficient, optical absorption, photoluminescence (PL), Raman, and AFM measurements. High-energy ion beam modification caused some remarkable thermoelectric and optical properties.