A New Integration-Based Procedure to Extract the Threshold Voltage, the Mobility Enhancement Factor, and the Series Resistance of Thin-Film MOSFETs

A method is presented to extract the series resistance, the threshold voltage, and the mobility enhancement factor of thin-film MOSFETs. This integration-based method, which only requires measuring the saturation drain current from a single test device, was tested using simulated and measured data of three different devices: amorphous indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO), and polysilicon thin-film transistors (TFTs).