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X-band 200W AlGaN/GaN HEMT for high power application
X-band 200W AlGaN/GaN HEMT for high power application
2011
Nishihara
Yamamoto
Mizuno
Sano
Hasegawa
Keywords:
X band
Electricity generation
Gallium nitride
Aluminum gallium nitride
Optoelectronics
High-electron-mobility transistor
power application
Logic gate
algan gan
Materials science
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