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Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction
Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction
2021
Tomoya Aota
Akihiro Hayasaka
Isao Makabe
Shigeki Yoshida
Takahiro Gotow
Yasuyuki Miyamoto
Keywords:
Optoelectronics
Electrochemistry
Materials science
Polar
photo assisted
High-electron-mobility transistor
Etching (microfabrication)
Correction
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