Analysis of high temperature characteristics and reliability of Asymmetry GCT

The influences of temperature on the characteristics of asymmetry gate commutated thyristor (A-GCT) and its safe operating area (SOA) are analyzed. The blocking and conducting characteristics of A-GCT at high temperature is simulated by ISE simulator. The results show that, with the rise of temperature, the blocking voltage increases firstly and then decreases, the leakage current increases remarkably. The current density of A-GCT during conducting has a negative temperature coefficient and the conducting characteristic of A-GCT at high temperature is improved. Lastly, the influence of temperature on the reliability of A-GCT is discussed, and the measures of preventing the thermal failure of A-GCT device are given.