Millimeter wave probe data for irradiated silicon

This paper describes some millimeter wave response data obtained from p-doped silicon wafers pre-exposed to low dose ionizing radiation of 3 different types with various doses. Comparisons of the sample specific responses are made with baseline signatures obtained from a pristine sample of the same dimension. Photoconductivity based RF signals acquired from these samples are assessed in terms of respective carrier mobility. Ratio of peak transmitted to peak reflected voltages for all samples are plotted for 150 GHz at partial laser fluences. Transmission and reflection coefficient spectra from DC outputs of detector are plotted for the gamma irradiated samples exposed at 3 different doses, and a minor change in DC response due to laser impulse on sample is shown as function of probe frequency.