High brightness visible (660 nm) resonant-cavity light-emitting diode

Visible (660 nm) resonant-cavity light-emitting (RCLEDs) have been fabricated. The top-emitting devices employed two AlGaAs-AlAs-Bragg mirrors and GaInP-AlGaInP quantum-well active layers. The device performance was characterized as a function of the device diameters, ranging from 24 to 202 /spl mu/m. The larger devices exhibited a nearly linear increase of output power with injected current with 8.4-mW emission at 120 mA. A maximum external efficiency of 4.8% was measured at 4 mA on the 84-/spl mu/m aperture devices. All devices exhibited a narrow emission at 659-661 nm with a linewidth around 3 nm. The results show that RCLED's are promising low-cost light sources for plastic fiber transmission as well as display applications.