The presence of C-V and G/ω-V peaks profile of Ag/SnO2/n-Si/Au diode for capacitor applications

Abstract The paper describes the behavior of capacitance (C-V) and conductance (G/ω-V) versus voltage characteristics of Ag/SnO 2 /n-Si/Au metal-oxide-semiconductor (MOS) junction under dark and light condition. In addition, C-V of the junction is measured at room temperature for several frequencies. Ag/SnO 2 /n-Si/Au MOSjunction is fabricated with both spray pyrolysis at kept substrate temperature of 300 °C and thermal evaporation in high vacuum processes for the SnO 2 layer and metallic contacts respectively. C-V curves present several peaks when SnO 2 /Si junction is illuminated with high light intensities. The peaks seem to Gaussian distribution within the reverse-forward bias voltage. Under dark room light and solar simulator conditions, the electrical measurements of junction are achieved presenting different behaviors. The carrier density, calculated from C-V measurements of metal oxide semiconductor junction as a function of light intensity, changes from 0.17 × 10 17 to 0.85 × 10 17 cm −3 as a result of light intensity.