Polarization dependent electro-optic effect in SOI waveguides with laterally diffused P-N junction

Polarization dependent plasma dispersion effect is investigated for single-mode SOI waveguides (λ ∼ 1550 nm) with laterally diffused p-n junction. The lateral p-n junction of desired length is formed initially in 1.5 μm thick SOI layer (BOX-2 μm) by diffusion doping and then the single-mode waveguides with appropriate design parameters (width W, height H, and slab height h) is defined along the junction for simulations studies to estimate V π and L π . It is observed that the device becomes more and more polarization sensitive as the device layer thickness (H) decreases, which is justified appropriately by calculating polarization dependent confinement factors as well as free carrier overlaps with the corresponding guided modes.