Hydrogenic impurity states in a parabolic quantum dot: Hydrostatic pressure and electric field effects

Abstract The binding energy of hydrogenic impurity associated with the ground state and some low-lying states in a GaAs spherical parabolic quantum dot with taking into account hydrostatic pressure and electric field are theoretically studied by using the configuration–integration method. The binding energies of these low-lying states of the impurity depend sensitively on the hydrostatic pressure, electric field and the strength of the parabolic confinement. Based on the analysis of these impurity states, we propose a way for preparation of quantum bit (qubit) by using the strong quantum confinement to the impurity in the quantum dot. Also we calculate the wave functions of some low-lying states to discuss the oscillator strength which is related to the electronic dipole-allowed transitions from 0s state to 0p state. The results show that the electronic dipole-allowed transitions mostly happen between the 0s state and 0p state, especially for the quantum confinement large enough.