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Field-Effect Transistors Based on Few-Layered Ambipolar MoSe$_{2}$ and $\alpha $-MoTe$_{2}$
Field-Effect Transistors Based on Few-Layered Ambipolar MoSe$_{2}$ and $\alpha $-MoTe$_{2}$
2015
Daniel Rhodes
Nihar Pradhan
Simin Feng
Byoung Hee Moon
Yan Xin
Sharhriar Memaran
Muhandis Siddiq
Lakshmi Bhaskaran
Stephen Hill
Humberto Terrones
Mauricio Terrones
Ajayan Pulickel
Luis Balicas
Keywords:
Condensed matter physics
Field-effect transistor
Ambipolar diffusion
Materials science
Optoelectronics
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